dmg6968u n-channel enhancement mode mosfet features ? low on-resistance ? 25m ? @ v gs = 4.5v ? 29m ? @ v gs = 2.5v ? 36m ? @ v gs = 1.8v ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2kv ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 3) part number qualification case packaging DMG6968U-7 commercial sot23 3000/tape & reel dmg6968uq-7 automotive sot23 3000/tape & reel notes: 1. no purposefully added lead. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic to p view d g s esd protected to 2kv source gate protection diode gate drain 2n4 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) 2n4 ym product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
dmg6968u maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (note 4) steady state t a = 25c t a = 70c i d 6.5 5.2 a pulsed drain current i dm 30 a thermal characteristics characteristic symbol value unit power dissipation (note 4) p d 1.3 w thermal resistance, junction to ambient @t a = 25c r ja 157 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25 c i dss ? ? 1.0 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 10v, v ds = 0v gate-source breakdown voltage bv sgs 12 - - v v ds = 0v, i g = 250 a on characteristics (note 5) gate threshold voltage v gs ( th ) 0.5 ? 0.9 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 21 25 m ? v gs = 4.5v, i d = 6.5a 23 29 v gs = 2.5v, i d = 5.5a 28 36 v gs = 1.8v, i d = 3.5a forward transfer admittance |y fs | ? 8 ? s v ds = 10v, i d = 5a dynamic characteristics input capacitance c iss ? 151 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 91 ? pf reverse transfer capacitance c rss ? 32 ? pf total gate charge q g ? 8.5 ? nc v gs = 4.5v, v ds = 10v, i d = 6.5a gate-source charge q g s ? 1.6 ? nc gate-drain charge q g d ? 2.8 ? nc turn-on delay time t d ( on ) ? 54 ? ns v dd = 10v, v gs = 4.5v, r l = 10 , r g = 6 , i d = 1a turn-on rise time t r ? 66 ? ns turn-off delay time t d ( off ) ? 613 ? ns turn-off fall time t f ? 205 ? ns notes: 2. device mounted on fr-4 substrate pc board, 2oz. copper , with thermal vias to bottom layer 1 inch square copper plate. 3. short duration pulse test used to minimize self-heating effect. sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification
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